| 청구기호 |
537/.24 |
| 판사항 |
1st ed.
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| 형태사항 |
1 electronic text (x, 92 p. : ill.) : digital file.
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| 총서명 |
Synthesis lectures on solid state materials and devices = 1932-1724 ; #1
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| 언어 |
영어 |
| 일반주기 |
Part of : Synthesis digital library of engineering and computer science.
Title from PDF t.p. (viewed on Oct. 27, 2008).
Series from website.
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| 서지주기 |
Includes bibliographical references (p. 86-90).
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| 내용 |
Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion.
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| 주제 |
Dielectrics.
Hafnium oxide.
Integrated circuits --Reliability.
Semiconductors --Junctions.
Breakdown (Electricity)
Metal oxide semiconductor field-effect transistors.
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| ISBN |
1598290045 (electronic bk.)
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| 기타 표준번호 |
10.2200/S00005ED1V01Y200508SSM001 |
| QR CODE |
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